? 2011 ixys corporation, all rights reserved ds98504c(03/11) n-channel enhancement mode avalanche rated, high dv/dt, low q g ixfh40n30q ixft40n30q hiperfet tm power mosfets q-class v dss = 300v i d25 = 40a r ds(on) 85m g = gate d = drain s = source tab = drain to-247 (ixfh) g s d (tab) d to-268 (ixft) s g d (tab) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 40 a i dm t c = 25 c, pulse width limited by t jm 160 a i a t c = 25 c40 a e as t c = 25 c 1.0 j dv/dt i s i dm , v dd v dss , t j 150c 5 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-268 4 g to-247 6 g not for new designs symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 4ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 85 m features z international standard packages z low intrinsic gate resistance z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls
ixys reserves the right to change limits, test conditions, and dimensions. ixfh40n30q ixft40n30q ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 outline terminals: 1 - gate 2 - drain 3 - source 4 - drain note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 20 27 s c iss 3560 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 640 pf c rss 170 pf t d(on) 20 ns t r 35 ns t d(off) 40 ns t f 12 ns q g(on) 92 140 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 22 35 nc q gd 38 70 nc r thjc 0.42 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 40 a i sm repetitive, pulse width limited by t jm 160 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns i rm 8.00 a q rm 0.85 c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1.5 (external) i f = 40a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2011 ixys corporation, all rights reserved ixfh40n30q ixft40n30q fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7 v 6 v 5 v 8 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 012345678 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6v fig. 4. r ds(on) normalized to i d = 20a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 40a i d = 20a fig. 5. r ds(on) normalized to i d = 20a value vs. drain current 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 10 20 30 40 50 60 70 80 90 100 110 120 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfh40n30q ixft40n30q fig. 7. input admittance 0 10 20 30 40 50 60 70 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 1020304050607080 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = 150v i d = 20a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc
? 2011 ixys corporation, all rights reserved ixfh40n30q ixft40n30q fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_40n30q(7xq)03-22-11-a
|
